| VFSHM _ 7 www'V'Shay'C°m Vishay General Semiconductor ELEc1'RIcAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted) PARAMETER TEST CONDITIONS IF : 4'0 A Instantaneous forward voltage T 25 °C A: rated VH T 125 QC . . I _5A,IR:1_0A, Typical reverse recovery time I 7 0 25 A W _ _Typical junction capacitance per diode 4.0 V, 1 MHZ N ates (i) Pulse test: 300 us pulse width, 1 % duty Cycle (2) Pulse test: Pulse width : 40 ms THERMAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted) PARAMETER mm Typical thermal resistance N ates W Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RNA - junction to ambient(2) Units mounted on PCB with 20 mm X 20 mm copper pad areas, 1 oz. FR4 PCB; RGJM - junction to mount PREFERRED P/N UNIT WEIGHT (9) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE AS4PJ-M3/86A 7" diameter plastic tape and reel AS4PJ-M3/87A 13" diameter plastic tape and reel As4PJHMa/86A-1) j 7--diameterplastictapeandreel AS4PJH M3/87A W 13" diameter plastic tape and reelNote (I) AEC-Q101 quali?ed Revision: 14-Aug-13 2 Document Number: 88770 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.comzdoc?9100!! |